York 031-02565-000 3.3V 128KX8 BRAM

3.3V 128KX8 BRAM

The 3.3V 128KX8 BRAM is a powerful memory option for your high performance, cutting edge vehicle. The York 031-02565-000 3.3V 128KX8 BRAM provides fast data read/write capabilities for your vehicle's operational needs. This additional memory will help you to view more of your action or still images on the screen at one time.

The new York 031-02565-000 3.3V 128KX8 BRAM is a memory created by the manufacturer

The 031-02565-000 is a 3.3V 128KX8 BRAM with memory protect.

Our 031-02565-000 3.3V 128KX8 BRAM works with a 400 MHz clock at 3.0V to 3.6V and is TSOP and QIP package compatible. It also boasts minimum noise and excellent power consumption levels: only 2mA standby and 20mA sleep, and while running it can draw up to 70mA of current.

The 3.3V 128Kx8 BRAM is a High-Speed Static RAM memory chip which provides 128 Kilobits of high-speed nonvolatile storage in an eight-pin SOIC package. Events are synchronized with P12, MCLR, or RESET#. The part has a Byte Write Enable (BWENB), Pen Write Enable (PENB), Chip Enable (CE%), and Output Enable (OE%). The data in the output registers is not changed when CE% or OE% in LOW state.

The 128KX8 BRAM module combines eight 128 Kbit (16 kB) EEPROMs on a common module.

Maybe you need several thousand programmable memory elements. Or, perhaps you require only a single 128 Kbit EEPROM. Now, you can interchange such hardware easily and economically with the York® YT6973 128K X 8 3.3V FLEXIPACK® Nonvolatile Random Access Memory (RAM) BRAM device. It's ideal for use in battery back-up applications and for custom applications where control integrity is critical. The YT6973 is based on a flexible packaging material and was developed because of continual requests from customers who could not find an off-theshelf solution to

The 128 KBX8 BRAM has eight banks of 8K×8 bits for a total capacity of 1 MB. The 128 KBX8 BRAMs consume less current than the comparable 256 KBX16 BRAM, and they consume 40% less power than the 128 KBX16 BRAM for a given read and write speed. Each BRAM includes a Serial Mode Register (SMR) and an External Chip Enable (ECE) signal for flexibility in system design.

The 128KX8 high-performance nonvolatile memory is organized as 8K words of 8-bit read/write memory. It is available at gate connection or wire wrap terminals, and after mask option to further customize the product.

When the power is out, don't be powerless! The Battery RAM keeps data in memory even when the computer's power supply is interrupted. It features an SIP (System in Package) design for reduced board space and increased efficiency. 128K X 8 SRAM with works with TTL or CMOS

128Kb dynamic RAM, organized as 8x16 Kb banks.

Flash is a series of electrically programmable non-volatile memory devices designed to be programmed once and never altered. Flash is ideal for storing and retrieving compiled code and data and can be accessed similar to RAM. The benefit of using Flash is the fast write speeds and reliable operation. Flash memory devices can be used in various applications including Networking, Industrial, Military, Medical and Consumer applications.